In a concerted effort between growth and advanced characterization teams 3ε FERRO will develop HfO2-based ferroelectrics focusing on the compatibility with Si semiconductor processing. Our main strategy will be to extend our investigation to a number of ferroelectric materials combinations and ferroelectric phase stabilizing dopants and employ a number of different growth methodologies (ALD, MBE, PLD) and advanced characterization techniques to ensure that all prospective candidates are properly screened increasing thechances for success. This core task targets objective 1 and 3 (OBJ1 and OBJ3)